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转子动力(Cent.)泵的安装,操作和维修

Rotodynamic (Cent.) Pumps for Installation, Operation & Maintenance

半导体器件 分立器件 场效应晶体管

Semiconductor devices. Discrete devices - Field-effect transistors

半导体器件 分立器件 第8部分:场效应晶体管

Semiconductor devices. Discrete devices. Part 8: Field-effect transistors

半导体器件 分立器件 第8部分;场效应晶体管 第一篇 1GHz、5W以下的单栅场效应晶体管空白详细规范

Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

场效应晶体管.直接传送全导纳模数测量方法

Field-effect transistors. Shot-circuit forward transfer admittance measurement technique

场效应晶体管.输出功率、功率放大系数和漏的有效系数的测量方法

Field-effect transistors. Method of measuring output power, power gain and drain efficiency

场效应晶体管.噪声系数测量方法

Field-effect transistors. Noise figure measurement technique

场效应晶体管.特性曲线测量方法

Field-effect transistors. Forward transconductance measurement technique

场效应晶体管.输出导纳有功分量的测量方法

Field-effect transistors. Active output conductance component measurement technique

场效应晶体管.输入电容、越渡电容和输出电容测量方法

Field-effect transistors. Input transfer and output capacitance measurement technique

场效应晶体管.闸门漏电流测量方法

Field-effect transistors. Gate leakage current measurement technique

场效应晶体管.门限电压和截止电压测量方法

Field-effect transistors. Threshold and cut-off voltage measurement technique

场效应晶体管.漏极起始电流测量方法

Field-effect transistors. Drain current for V(Gs)=0 measurement technique

场效应晶体管 参数系统

Field effect transistor. Parameters system

半导体器件 分立器件 第4部分：微波二极管和晶体管（2.1 版；综合重。

Dispositifs à semiconducteurs – Dispositifs discrets – Partie 4: Diodes et transistors hyperfréquences (Edition 2.1; Consolidated Reprint)

半导体器件 分立器件 第8部分:场效应晶体管 第3节:外壳额定开关场效应晶体管空白详细规范

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications

半导体器件.分立器件.第8部分:场效应晶体管

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

半导体器件分立器件第8部分:场效应晶体管

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

半导体器件分立器件第8部分:场效应晶体管

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

数字微波无线电传输系统使用美利体育官网首页网址的测量方法 第3部分:卫星地面站的测量 第6节:大功率放大器

Methods of measurement for equipment used in digital microwave transmission systems - Part 3: Measurements on satellite earth stations - Section 6: High-power amplifiers

纳米制造 - 关键控制特性 - 第12-3部分：二维材料相关产品 - 基于二维材料的场效应晶体管的肖特基势垒高度：温度相关电流-电压测量

Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current-voltage measurements

纳米制造.关键控制特性.第6-16部分:二维材料.载流子浓度:场效应晶体管法

Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

纳米制造 - 关键控制特性 - 第6-27部分：石墨烯相关产品 - 二维材料层的场效应迁移率：场效应晶体管法

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

纳米制造 - 可靠性评估 - 第3-4部分：金属接触二维半导体器件输出特性的线性度

Nanomanufacturing - Reliability assessment - Part 3-4: Linearity of output characteristics for metal contacted 2D semiconductor devices

晶体管的测量方法

Measuring methods for transistors

晶体管用通用规则

General rules for transistors

纳米制造 关键控制特性 第6-16部分：二维材料 载流子浓度：场效应晶体管法

Nanomanufacturing — Key control characteristics — Part 6-16: Two-dimensional materials — Carrier concentration: Field effect transistor method

纳米制造 关键控制特性 第6-27部分：石墨烯相关产品 二维材料层的场效应迁移率：场效应晶体管法

Nanomanufacturing — Key control characteristics — Part 6-27: Graphene-related products — Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

纳米制造 - 关键控制特性 - 第12-3部分：二维材料相关产品 - 基于二维材料的场效应晶体管的肖特基势垒高度：温度依赖性电流-电压测量

Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current-voltage measurements