普军级是半导体分立器件的质量保证等级之一，用字母GP表示，适用于3DA522、3DD155等器件的通用军用环境。它属于较低级别，满足一般军用要求，如GJB33A标准所规定。
| 标准号 & 类别 | 标准名称 | 发布 |
|---|---|---|
| SJ 50033.51-1994 规范 |
半导体分立器件.CS0558型砷化镓微波双栅场效应晶体管详细规范 Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
特军级 |
1994-09-30 行业标准-电子 |
| SJ 50033/103-1996 规范 |
Semiconductor discrete devices--Detail specification for Type 3DA89 high-frequency power transistor
|
1996-08-30 行业标准-电子 |
| SJ 50033/107-1996 规范 |
半导体分立器件.2EY621、2EY622、2EY623型体效应二极管详细规范 Semiconductor discrete device.Detail specification for Gunn diodes for type 2EY621,2EY622,2EY623
特军级 |
1996-08-30 行业标准-电子 |
| SJ 50033/110-1996 规范 |
Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
|
1996-08-30 行业标准-电子 |
| SJ 50033/112-1996 规范 |
Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
特军级 |
1996-08-30 行业标准-电子 |
| SJ 50033/113-1996 规范 |
Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
特军级 |
1996-08-30 行业标准-电子 |
| SJ 50033/115-1997 规范 |
Semiconductor discrete devices Detail specification for type 2CK28 silicon large current switch diode
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/116-1997 规范 |
Semiconductor discrete devices Detail specification for type 2CK29 silicon large current switch diode
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/117-1997 规范 |
Semiconductor discrete devices Detail specification for type 2CK38 silicon large current switch diode
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/118-1997 规范 |
Semiconductor discrete devices Detail specification for type 2EK31 GaAs switching diode
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/119-1997 规范 |
半导体分立器件 CS204型砷化镓微波功率场效应晶体管详细规范 Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/120-1997 规范 |
半导体分立器件 CS205型砷化镓微波功率场效应晶体管详细规范 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
特军级 |
1997-1-1 行业标准-电子 |
| SJ 50033/129-1997 规范 |
Semiconductor discrete devices.Detail specification for type 3DD155 low-frequency and high-power transistor
特军级 |
1997-06-17 行业标准-电子 |
| SJ 50033/137-1997 规范 |
Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
特军级 |
1997-06-17 行业标准-电子 |
| SJ 50033/138-1998 规范 |
Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
特军级 |
1998-03-18 行业标准-电子 |
| SJ 50033/139-1998 规范 |
Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
特军级 |
1998-03-18 行业标准-电子 |
| SJ 50033/140-1999 规范 |
半导体光电子器件 3DA502型硅微波脉冲功率晶体管详细规范 Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor
特军级 |
1999-1-1 行业标准-电子 |
| SJ 50033/142-1999 规范 |
Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
特军级 |
1999-11-10 行业标准-电子 |
| SJ 50033/144-1999 规范 |
半导体分立器件.2CW50～78型玻璃钝化封装硅电压调整二极管详细规范 Semiconductor discrete devices.Detail specification for types 2CW50～78 glass passivation package Silicon voltage-regulator diodes
特军级 |
1999-11-10 行业标准-电子 |
| SJ 50033/146-2000 规范 |
半导体分立器件.3DA601型C波段硅双极型功率晶体管详细规范 Semiconductor discrete devices.Detail specification for type 3DA601 C silicon bipolar power transistor
特军级 |
2000-10-20 行业标准-电子 |
| SJ 50033/161-2002 规范 |
半导体分立器件.2CW210～251型硅电压调整二极管.详细规范 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210～251
|
2002-10-30 行业标准-电子 |
| SJ 50033/175-2007 规范 |
Semiconductro discrete devices Detail specification for type 3DA522 silicon microwave pulse power transistor
|
2008-01-24 行业标准-电子 |
| SJ 50033/29-1994 规范 |
Semiconductor discrete device.Detail specification for GaAs high-speed switching assembly for type EK20
特军级 |
1994-09-30 行业标准-电子 |
| SJ 50033/42-1994 规范 |
半导体分立器件.CSO467型砷化镓微波场效应晶体管详细规范 Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
特军级 |
1994-09-30 行业标准-电子 |
| SJ 50033/62-1995 规范 |
Semiconductor discrete device.Detail specification for type 3DK406 high-voltage and power switching transistor
特军级 |
1995-05-25 行业标准-电子 |
| SJ 50033/65-1995 规范 |
Semiconductor discrete device.Detail specification for type 3DD175 low-frequency and high-power transistor
特军级 |
1995-05-25 行业标准-电子 |
| SJ 50033/66-1995 规范 |
Semiconductor discrete device.Detail specification for type 3DD880 low-frequency and high-power transistor
|
1995-05-25 行业标准-电子 |
| SJ 50033/85-1995 规范 |
半导体分立器件.CS141型硅N沟道MOS耗尽型场效应晶体管详细规范 Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor
特军级 |
1995-05-25 行业标准-电子 |
Copyright ?2007-2026 ANTPEDIA, All Rights Reserved
京ICP备07018254号 京公网安备1101085018 电信与信息服务业务经营许可证：京ICP证110310号
页面更新时间: 2026-09-07 00:04