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电子元件质量评估协调制度规范 — 空白详细规范 — 用于低频放大的外壳额定双极晶体管

Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Case - rated bipolar transistors for low frequency amplification

电子元件质量评估协调制度规范 — 空白详细规范 — 高频放大用外壳额定双极晶体管

Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Case - rated bipolar transistors for high frequency amplification

半导体器件 分立器件 第7部分：双极型晶体管

Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors

半导体器件 分立器件 第7部分;双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范

Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

半导体器件 分立器件 第7部分;双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范

Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section Four--Blank detail specification for case-rated bipolar transistors for high-frequency amplification

晶体管.集电－发射集反向电流的测量方法

Transistors. Method for measuring collector-emitter reverse current

双极晶体管 参数系统

Bipolar transistors. Parameters system

半导体器件.分立器件.第7部分:双极晶体管

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

电子元器件详细规范.3DA505型L波段硅脉冲功率晶体管

Detail specification for electronic components.Type 3DA505 L band silicon pulse power transistor

半导体分立器件 3CG180型硅ＰＮＰ高频高反压小功率晶体管详细规范

Semiconductor discrete device 3CG180 type silicon PNP high frequency high back voltage low power transistor detailed specification

半导体分立器件 3DK101型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK101 type NPN silicon low power switching transistor detailed specification

半导体分立器件 3DK104型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK104 type NPN silicon low power switching transistor detailed specification